Light sources for high-volume manufacturing EUV lithography: technology, performance, and power scaling
نویسندگان
چکیده
منابع مشابه
Advances in computer simulations of LPP sources for EUV Lithography
Photon sources for extreme ultraviolet Lithography (EUVL) are still challenging problem to achieve high volume manufacture in the semiconductor industry. Currently EUVL community narrowed the research and developments to two directions: discharge produced plasma (DPP) assisted with trigger lasers and dual-pulse laser produced plasma (LPP) with mass-limited targets. Such complicated systems requ...
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Tin, lithium, and xenon laser-produced plasmas are attractive candidates as light sources for extreme ultraviolet lithography (EUVL). Simulation of the dynamics and spectral properties of plasmas created in EUVL experiments plays a crucial role in analyzing and interpreting experimental measurements, and in optimizing the 13.5 nm radiation from the plasma source. Developing a good understanding...
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Laser produced plasma (LPP) sources for extreme ultraviolet (EUV) photons are currently based on using small liquid tin droplets as target that has advantages in generation of stable continuous targets at high repetition rate, larger photon collection angle, and reduced contamination and damage to optical mirror system from plasma debris and energetic particles. The ideal target is to generate ...
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Laser produced plasma (LPP) systems have been developed as the primary approach for the EUV scanner light source for optical imaging of circuit features at sub-22nm and beyond nodes on the ITRS roadmap. This paper provides a review of development progress and productization status for LPP extreme-ultra-violet (EUV) sources with performance goals targeted to meet specific requirements from leadi...
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Our paper will use stochastic simulations to explore how EUV pattern roughness can cause device failure through rare events, so-called “black swans”. We examine the impact of stochastic noise on the yield of simple wiring patterns with 36nm pitch, corresponding to 7nm node logic, using a local Critical Dimension(CD)-based fail criteria Contact hole failures are examined in a similar way. For ou...
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ژورنال
عنوان ژورنال: Advanced Optical Technologies
سال: 2017
ISSN: 2192-8584,2192-8576
DOI: 10.1515/aot-2017-0029